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BD179G Datasheet(PDF) 1 Page - ON Semiconductor

Part # BD179G
Description  Plastic Medium-Power Silicon NPN Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD179G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
Noember, 2013 − Rev. 15
1
Publication Order Number:
BD179/D
BD179G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers
and drivers utilizing complementary or quasi complementary circuits.
Features
High DC Current Gain
BD179 is complementary with BD180
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Collector−Base Voltage
VCBO
80
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
30
240
W
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
4.16
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS, 30 WATTS
http://onsemi.com
BD179G
TO−225
(Pb−Free)
500 Units/Box
MARKING DIAGRAM
YWW
BD179G
Y
= Year
WW
= Work Week
BD179 = Device Code
G
= Pb−Free Package
3
BASE
1
EMITTER
COLLECTOR
2
TO−225
CASE 77
STYLE 1
3 2 1


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