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MJD2955G Datasheet(PDF) 4 Page - ON Semiconductor |
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MJD2955G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page MJD2955 (PNP), MJD3055 (NPN) http://onsemi.com 4 Figure 6. “On” Voltages, MJD2955 2 0.1 0 0.2 0.3 0.5 1 3 10 0.8 1.6 1.2 0.4 5 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 3 V Figure 7. Switching Time Test Circuit Figure 8. Thermal Response t, TIME (ms) 1 0.01 0.02 0.7 0.2 0.1 0.05 0.02 0.05 1 2 5 10 20 50 100 200 500 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.02 0.01 SINGLE PULSE 0.1 0.1 0.5 0.2 1 k 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 IC, COLLECTOR CURRENT (AMP) 2 +11 V 25 ms 0 -9 V RB -4 V D1 SCOPE VCC +30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1% 51 D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.01 Figure 9. Maximum Forward Bias Safe Operating Area 0.01 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.02 5 2 1 10 0.5 0.1 TJ = 150°C 1ms dc 3 0.3 0.6 1 2 60 20 40 WIRE BOND LIMIT THERMAL LIMIT TC = 25°C (D = 0.1) SECOND BREAKDOWN LIMIT 10 6 4 500 ms 0.03 0.05 100 ms 5ms Forward Bias Safe Operating Area Information There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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