MJD5731_13 datasheet(2/5 Pages) ONSEMI

Part #	MJD5731

Description	High Voltage PNP Silicon Power Transistors

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MJD5731

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

350

−

Vdc

Collector Cutoff Current

(VCE = 250 Vdc, IB = 0)

ICEO

−

0.1

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

ICES

−

0.01

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1.0 Adc, VCE = 10 Vdc)

hFE

30

10

175

−

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

−

1.0

Vdc

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 10 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)

fT

10

−

MHz

Small−Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

25

−

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

TJ = 25°C

0.03

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0

0.02 0.03

0.05

0.1

0.2

0.5

1.0

2.0

30

10

3.0

Figure 2. Collector−Emitter Saturation Voltage

0.02

IC, COLLECTOR CURRENT (AMPS)

0

0.05

0.3

1.2

5.0

VCE = 10 V

1.0

2.0

1.4

1

TJ = 150°C

20

0.5

0.3

0.8

0.6

0.1

VCE(sat)) @ IC/IB = 5.0

0.2

0.4

25

°C

-55

°C

100

50

200

150

°C

-55

°C

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