MRFG35010MT1 datasheet(2/8 Pages) MOTOROLA

Part #	MRFG35010MT1

Description	Gallium Arsenide PHEMT

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Manufacturer	MOTOROLA [Motorola, Inc]

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MRFG35010MT1

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

IDSS

—

2.9

—

Adc

Off State Leakage Current

(VGS = -0.4 Vdc, VDS = 0 Vdc)

IGSS

—

< 1.0

100

µAdc

Off State Drain Current

(VDS = 12 Vdc, VGS = -1.9 Vdc)

IDSO

—

0.1

1.0

mAdc

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

IDSX

—

2.0

15

mAdc

Gate-Source Cut-off Voltage

(VDS = 3.5 Vdc, IDS = 15 mA)

VGS(th)

-1.2

-1.0

-0.7

Vdc

Quiescent Gate Voltage

(VDS = 12 Vdc, IDQ = 180 mA)

VGS(Q)

-1.2

-0.95

-0.7

Vdc

Power Gain

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

Gps

9.0

10

—

dB

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

P1dB

—

9

—

W

Drain Efficiency

(VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg.,

f = 3.55 GHz)

hD

23

28

—

%

Adjacent Channel Power Ratio

(VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA,

f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability,

64 CH, 3.84 MCPS)

ACPR

—

-43

-40

dBc

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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