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MRF9130LSR3 Datasheet(PDF) 1 Page - Motorola, Inc |
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MRF9130LSR3 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 12 page 1 MRF9130LR3 MRF9130LSR3 MOTOROLA RF DEVICE DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 298 1.7 Watts W/°C Storage Temperature Range Tstg - 65 to +200 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.6 °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9130L/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9130LR3 MRF9130LSR3 GSM/GSM EDGE 921-960 MHz, 130 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF9130LR3 CASE 465A-06, STYLE 1 NI-780S MRF9130LSR3 Motorola, Inc. 2004 REV 2 Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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