MRF9045MBR1 datasheet(2/12 Pages) MOTOROLA

Part #	MRF9045MBR1

Description	RF POWER FIELD EFFECT TRANSISTORS

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MRF9045MR1 MRF9045MBR1

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

10

µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

1

µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

1

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 µAdc)

VGS(th)

2

2.8

4

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 350 mAdc)

VGS(Q)

3

3.7

5

Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.22

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs

—

4

—

S

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

70

—

pF

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

38

—

pF

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.7

—

pF

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)

Two–Tone Common–Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps

17

19

—

dB

Two–Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

η

38

41

—

%

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

—

–31

–28

dBc

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

—

–14

–9

dB

Two–Tone Common–Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Gps

—

19

—

dB

Two–Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

η

—

41

—

%

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IMD

—

–31

—

dBc

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IRL

—

–13

—

dB

Freescale Semiconductor, Inc.

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