II. Manufacturing Information

A. Description/Function:

Low-Power, Low-Glitch, Octal 10-Bit Voltage-Output DACs with Serial Interface

B. Process:

S6 (Standard 0.6 micron silicon gate CMOS)

C. Number of Device Transistors:

19,000

D. Fabrication Location:

California, USA

E. Assembly Location:

Malaysia or Thailand

F. Date of Initial Production:

July, 2001

III. Packaging Information

A. Package Type:

16-Pin TSSOP

B. Lead Frame:

Copper

C. Lead Finish:

Solder Plate

D. Die Attach:

Silver-Filled Epoxy

E. Bondwire:

Gold (1 mil dia.)

F. Mold Material:

Epoxy with silica filler

G. Assembly Diagram:

#05-3901-0002

H. Flammability Rating:

Class UL94-V0

I. Classification of Moisture Sensitivity

per JEDEC standard J-STD-020-A:

Level 1

IV. Die Information

A. Dimensions:

102 x 141 mils

B. Passivation:

C. Interconnect:

Aluminum/Si (Si = 1%)

D. Backside Metallization:

None

E. Minimum Metal Width:

0.6 microns (as drawn)

F. Minimum Metal Spacing:

0.6 microns (as drawn)

G. Bondpad Dimensions:

5 mil. Sq.

H. Isolation Dielectric:

I. Die Separation Method:

Wafer Saw