CDNBS08-T12C datasheet(1/4 Pages) BOURNS

Part #	CDNBS08-T12C

Description	RoHS compliant

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Manufacturer	BOURNS [Bourns Electronic Solutions]

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Features

■ RoHS compliant*

■ Protects four lines

■ Unidirectional and bidirectional

conﬁgurations

■ ESD protection: 30 kV max.

Applications

■ Audio/video inputs

■ RS-232, RS-422 and RS-423 data lines

■ Portable electronics

■ Medical sensors

CDNBS08-T03~T36C - TVS Diode Array Series

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

General Information

The markets of portable communications, computing and video equipment are

challenging the semiconductor industry to develop increasingly smaller electronic

components.

Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and

ESD protection applications in an eight lead narrow body SOIC package size format.

TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging

from 3 V to 36 V in unidirectional and bidirectional conﬁgurations. Bourns® Chip Diodes

conform to JEDEC standards, are easy to handle on standard pick and place

equipment and their ﬂat conﬁguration minimizes roll away.

The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and

IEC 61000-4-5 (Surge) requirements.

8765

1234

8765

1234

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CDNBS08-

Unit

Uni-

T03

Bi-

T03C

Uni-

T05

Bi-

T05C

Uni-

T08

Bi-

T08C

Uni-

T12

Bi-

T12C

Uni-

T15

Bi-

T15C

Uni-

T24

Bi-

T24C

Uni-

T36

Bi-

T36C

Min. Breakdown Voltage @ 1 mA

VBR

3.3

6.0

8.5

13.3

16.7

26.7

40.0

V

Working Peak Voltage

VWM

3.0

5.0

8.0

12.0

15.0

24.0

36.0

V

Max. Clamping Voltage

VC @ IP = 1 A 1

VC

8.0

9.8

13.4

19.0

24.0

43.0

51.0

V

Typ. Clamping Voltage

@ 8/20 µs VC @ IPP 1

VC

10.9 V

@ 43 A

13.5 V

@ 42 A

16.9 V

@ 34 A

25.9 V

@ 21 A

30.0 V

@ 17 A

49.0 V

@ 12 A

76.8 V

@ 9 A

V

Max. Leakage Current @ VWM

ID

125

20

10

1

µA

Max. Cap. Bidirectional @ 0 V,

1 MHz

CJ(SD)

450

308

300

105

80

50

45

pF

ESD Protection per IEC 61000-4-2

Contact - Min.

Contact - Max.

Air - Min.

Air - Max.

ESD

±8

±30

±15

±30

kV

Peak Pulse Power (tp = 8/20 µs) 2

PPP

500

W

Forward Voltage @ 100 mA,

300 µs - Square Wave 3

VF

1.5

V

Notes:

1.

See Pulse Wave Form.

2.

See Peak Pulse Power vs. Pulse Time.

3.

Only applies to unidirectional devices.

4.

Part numbers with a “C” sufﬁx are bidirectional devices, i.e. CDNBS08-T03C.

Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter

Symbol

Max.

Unit

Operating Temperature

TJ

-55 to +150

°C

Storage Temperature

TSTG

-55 to +150

°C

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