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CDNBS08-T12C Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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CDNBS08-T12C Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page Features ■ RoHS compliant* ■ Protects four lines ■ Unidirectional and bidirectional configurations ■ ESD protection: 30 kV max. Applications ■ Audio/video inputs ■ RS-232, RS-422 and RS-423 data lines ■ Portable electronics ■ Medical sensors CDNBS08-T03~T36C - TVS Diode Array Series *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format. TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. 8765 1234 8765 1234 Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDNBS08- Unit Uni- T03 Bi- T03C Uni- T05 Bi- T05C Uni- T08 Bi- T08C Uni- T12 Bi- T12C Uni- T15 Bi- T15C Uni- T24 Bi- T24C Uni- T36 Bi- T36C Min. Breakdown Voltage @ 1 mA VBR 3.3 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V Max. Clamping Voltage VC @ IP = 1 A 1 VC 8.0 9.8 13.4 19.0 24.0 43.0 51.0 V Typ. Clamping Voltage @ 8/20 µs VC @ IPP 1 VC 10.9 V @ 43 A 13.5 V @ 42 A 16.9 V @ 34 A 25.9 V @ 21 A 30.0 V @ 17 A 49.0 V @ 12 A 76.8 V @ 9 A V Max. Leakage Current @ VWM ID 125 20 10 1 1 1 1 µA Max. Cap. Bidirectional @ 0 V, 1 MHz CJ(SD) 450 308 300 105 80 50 45 pF ESD Protection per IEC 61000-4-2 Contact - Min. Contact - Max. Air - Min. Air - Max. ESD ±8 ±30 ±15 ±30 kV Peak Pulse Power (tp = 8/20 µs) 2 PPP 500 W Forward Voltage @ 100 mA, 300 µs - Square Wave 3 VF 1.5 V Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Max. Unit Operating Temperature TJ -55 to +150 °C Storage Temperature TSTG -55 to +150 °C |
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