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MURA215 Datasheet(PDF) 2 Page - ON Semiconductor |
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MURA215 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MURA215, SURA8215, MURA220, NRVUA220V, SURA8220 www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA215T3G/SURA8215T3G MURA220T3G/SURA8220T3G/NRVUA220VT3G VRRM VRWM VR 150 200 V Average Rectified Forward Current @ TL = 155°C @ TL = 135°C IF(AV) 1.0 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Operating Junction Temperature Range TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) PsiJL (Note 2) RqJA 24 216 °C/W 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL. ELECTRICAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF 0.95 0.77 V Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR 2.0 50 mA Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr 35 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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