BD237G datasheet(2/5 Pages) ONSEMI

Part #	BD237G

Description	Plastic Medium Power Bipolar Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BD237G (NPN), BD234G, BD238G (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0)

BD237G, BD238G

BD234G

V(BR)CEO

80

45

−

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

BD237G, BD238G

(VCB = 60 Vdc, IE = 0)

BD234G

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

DC Current Gain

(IC = 0.15 A, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

hFE1

hFE2

40

25

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

−

0.6

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.3

Vdc

Current−Gain − Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT

3.0

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Active Region Safe Operating Area

10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3

1

0.1

3

10

30

100

0.3

TJ = 150°C

dc

5 ms

1

100

ms

1 ms

BD237

BD236

The Safe Operating Area Curves indicate IC−VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To

insure

operation

below

the

maximum

TJ,

power−temperature derating must be observed for both

steady state and pulse power conditions.

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