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BD237G Datasheet(PDF) 2 Page - ON Semiconductor |
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BD237G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page BD237G (NPN), BD234G, BD238G (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) BD237G, BD238G BD234G V(BR)CEO 80 45 − − Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) BD237G, BD238G (VCB = 60 Vdc, IE = 0) BD234G ICBO − − 0.1 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE1 hFE2 40 25 − − − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.6 Vdc Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.3 Vdc Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 − MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Figure 1. Active Region Safe Operating Area 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 1 0.1 3 10 30 100 0.3 TJ = 150°C dc 5 ms 1 100 ms 1 ms BD237 BD236 The Safe Operating Area Curves indicate IC−VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. |
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