GLT5640AL16P-10TC datasheet(5/72 Pages) ETC

Part #	GLT5640AL16P-10TC

Description	4M X 16 CMOS Synchronous Dynamic RAM

Download	72 Pages

Scroll/Zoom	100%

Manufacturer	ETC [List of Unclassifed Manufacturers]

Direct Link

Logo

5 / 72 page

G -LINK

GLT5640AL16

4M X 16 CMOS Synchronous Dynamic RAM

Feb 2004 (Rev.0.1)

G-Link Technology Corporation, Taiwan

Web : www.glink.com.tw

Email : sales@glink.com.tw

TEL : 886-2-27968078

- 5 -

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Supply Voltage

VDD

with respect to VSS

-0.5 to 4.6

V

Supply Voltage for Output

VDDQ

with respect to VSSQ

-0.5 to 4.6

V

Input Voltage

VI

with respect to VSS

-0.5 to VDD+0.5

V

Output Voltage

VO

with respect to VSSQ

-0.5 to VDDQ+0.5

V

Short circuit output current

IO

50

mA

Power dissipation

PD

Ta = 25 °C

1

W

Operating temperature

TOPT

0 to 70

°C

Storage temperature

TSTG

-65 to 150

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be

operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

Recommended Operating Conditions (Ta = 0 ~ 70 °C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Min.

Typ.

Max.

Supply Voltage

VDD

3.0

3.3

3.6

V

Supply Voltage for DQ

VDDQ

3.0

3.3

3.6

V

Ground

VSS

0

V

Ground for DQ

VSSQ

0

V

High Level Input Voltage (all inputs)

VIH

2.0

VDD + 0.3

V

Low Level Input Voltage (all inputs)

VIL

-0.3

0.8

V

Note :

1.All voltages are referenced to Vss = 0V.

2.VIH (max) is acceptable 5.6V AC pulse width with

≤ 3ns of duration.

3.VIL (min) is acceptable -2.0V AC pulse width with

≤ 3ns of duration.

Pin Capacitance (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3

±±0.3V , V

SS = VSSQ = 0V, unless otherwise noted)

Parameter

Symbol

Min

Max

Unit

Input Capacitance, address & control pin

CIN

2.5

3.8

pF

Input Capacitance, CLK pin

CCLK

2.5

3.5

pF

Data input / output capacitance

CI/O

4.0

6.5

pF

Similar Part No. - GLT5640AL16P-10TC

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	GLT5640L32	906Kb / 49P	CMOS Synchronous DRAM 2M x 32 SDRAM
	GLT5640L32-10	906Kb / 49P	CMOS Synchronous DRAM 2M x 32 SDRAM
	GLT5640L32-5	906Kb / 49P	CMOS Synchronous DRAM 2M x 32 SDRAM
	GLT5640L32-5.5	906Kb / 49P	CMOS Synchronous DRAM 2M x 32 SDRAM
	GLT5640L32-6	906Kb / 49P	CMOS Synchronous DRAM 2M x 32 SDRAM

More results

Similar Description - GLT5640AL16P-10TC

Manufacturer	Part #	Datasheet	Description
Siemens Semiconductor G...	HYB3164165BT	304Kb / 29P	4M x 16-Bit Dynamic RAM
	HYB3164160AT	216Kb / 26P	4M x 16-Bit Dynamic RAM
	HYB3164165AT	284Kb / 29P	4M x 16-Bit Dynamic RAM
	HYB3164160T	367Kb / 26P	4M x 16-Bit Dynamic RAM
	HYB3164165T	391Kb / 30P	4M x 16-Bit Dynamic RAM
Mosel Vitelic, Corp	V53C516400A	172Kb / 24P	4M x 4 FAST PAGE MODE CMOS DYNAMIC RAM
Vanguard International ...	VG36128401A	940Kb / 69P	CMOS Synchronous Dynamic RAM
Siemens Semiconductor G...	HYB314100BJBJL-50-	1Mb / 23P	4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
Mosel Vitelic, Corp	V53C516405A	170Kb / 24P	4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM
List of Unclassifed Man...	VG36641641DT-6	1Mb / 69P	CMOS Synchronous Dynamic RAM

More results

GLT5640AL16P-10TC Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers

GLT5640AL16P-10TC Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers

Similar Part No. - GLT5640AL16P-10TC

Similar Description - GLT5640AL16P-10TC

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72

Datasheet Download

Link URL