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AMP04FSZ-RL Datasheet(PDF) 6 Page - Analog Devices

Part # AMP04FSZ-RL
Description  Precision Single Supply Instrumentation Amplifier
Download  18 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AMP04FSZ-RL Datasheet(HTML) 6 Page - Analog Devices

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AMP04
–5–
Parameter
Symbol
Conditions
Limit
Unit
G = 1000
80
dB min
Power Supply Rejection
PSRR
4.0 V
≤ VS ≤ 12 V
G = 1
85
dB min
G = 10
95
dB min
G = 100
95
dB min
G = 1000
95
dB min
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy
G = 1 to 100
0.75
% max
OUTPUT
Output Voltage Swing High
VOH
RL = 2 k
4.0
V min
Output Voltage Swing Low
VOL
RL = 2 k
2.5
mV max
POWER SUPPLY
Supply Current
ISY
VS =
±15
900
µA max
700
µA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Common-Mode Input Voltage
2
. . . . . . . . . . . . . . . . . . .
±18 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range
AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300
°C
Package Type
JA
3
JC
Unit
103
43
°C/W
8-Lead Plastic DIP (P)
8-Lead SOIC (S)
158
43
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages less than
± 18 V, the absolute maximum input voltage is
equal to the supply voltage.
3
θ
JA is specified for the worst case conditions, i.e.,
θ
JA is specified for device in
socket for
a P-DIP package; θ
JA is specified for device soldered in circuit board
for SOIC package.
DICE CHARACTERISTICS
RGAIN
1
RGAIN
8
7 V+
6 VOUT
5 REF
–IN 2
+IN 3
V– 4
AMP04 Die Size 0.075
× 0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.
REV. C


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