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LM5165YQDGSTQ1 Datasheet(PDF) 6 Page - Texas Instruments |
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LM5165YQDGSTQ1 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 47 page  6 LM5165-Q1 SNVSAJ3A – MARCH 2016 – REVISED MARCH 2016 www.ti.com Product Folder Links: LM5165-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Operating Ratings are conditions under which the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics. (2) High junction temperatures degrade operating lifetimes. Operating lifetime is derated for junction temperatures greater than 125°C. 6.3 Recommended Operating Conditions (1) Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted). PARAMETER MIN NOM MAX UNIT Input voltages VIN 3 65 V EN –0.3 VVIN PGOOD –0.3 12 HYS –0.3 5 Output current IOUT (COT mode) 0 150 mA IOUT (PFM mode) 0 100 mA Temperature Operating junction temperature(2) –40 150 °C (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) LM5165-Q1 UNIT VSON 10 PINS RθJA Junction-to-ambient thermal resistance 47.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 59.9 RθJB Junction-to-board thermal resistance 22.1 ψJT Junction-to-top characterization parameter 1.0 ψJB Junction-to-board characterization parameter 22.2 RθJC(bot) Junction-to-case (bottom) thermal resistance 4.0 (1) All hot and cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control. (2) The junction temperature (TJ in °C) is calculated from the ambient temperature (TA in °C) and power dissipation (PD in Watts) as follows: TJ = TA + (PD • θJA) where θJA (in °C/W) is the package thermal impedance provided in the Thermal Information section. 6.5 Electrical Characteristics Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over –40°C to +125°C junction temperature range. VIN = 12 V (unless otherwise noted). (1) (2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT QUIESCENT CURRENTS IQ-SHD VIN DC supply current, shutdown VEN = 0 V, TA = 25°C 4.6 6.0 µA IQ-SLEEP VIN DC supply current, no load VFB = 1.5 V, TA = 25°C 10.5 15.0 IQ-SLEEP-VINMAX VIN DC supply current, no load, VIN = 65V VFB = 1.5 V, VVIN = 65 V, TA = 25°C 11.0 15.0 IQ-ACTIVE-PFM VIN DC supply current, active PFM mode 205 IQ-ACTIVE-COT VIN DC supply current, active COT mode, RRT = 107 kΩ 300 POWER SWITCHES RDSON1 High-side MOSFET RDS(on) ISW = –10 mA 2 Ω RDSON2 Low-side MOSFET RDS(on) ISW = 10 mA 1 CURRENT LIMITING ILIM1 High-side peak current current threshold ILIM shorted to GND 220 240 264 mA ILIM2 RILIM = 24.9 kΩ 155 180 205 ILIM3 RILIM = 56.2 kΩ 100 120 145 ILIM4 RILIM = 100 kΩ 48 60 75 REGULATION COMPARATOR VVOUT50 VOUT 5V DC setpoint LM5165X 4.9 5.0 5.1 V VVOUT33 VOUT 3.3V DC setpoint LM5165Y 3.23 3.30 3.37 |
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