ISO5852S datasheet(6/43 Pages) TI1

Part #	ISO5852S

Description	High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

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6

ISO5852S-EP

SLLSEW1 – DECEMBER 2016

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Product Folder Links: ISO5852S-EP

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

ISO5852S-EP

UNIT

DW (SOIC)

16 PINS

RθJA

Junction-to-ambient thermal resistance

99.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

48.5

°C/W

RθJB

Junction-to-board thermal resistance

56.5

°C/W

ψJT

Junction-to-top characterization parameter

29.2

°C/W

ψJB

Junction-to-board characterization parameter

56.5

°C/W

7.5 Power Ratings

Full-chip power dissipation is derated 10.04 mW/°C beyond 25°C ambient temperature. At 125°C ambient temperature, a

maximum of 251 mW total power dissipation is allowed. Power dissipation can be optimized depending on ambient

temperature and board design, while ensuring that the junction temperature does not exceed 150°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PD

Maximum power dissipation (both sides)

VCC1 = 5.5-V, VCC2 = 30-V, TA = 25°C

1255

mW

PD(I)

Maximum input power dissipation

VCC1 = 5.5-V, VCC2 = 30-V, TA = 25°C

175

mW

PD(O)

Maximum output power dissipation

VCC1 = 5.5-V, VCC2 = 30-V, TA = 25°C

1080

mW

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