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INA240A1-Q1 Datasheet(PDF) 4 Page - Texas Instruments |
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INA240A1-Q1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 34 page 4 INA240-Q1 SBOS808A – AUGUST 2016 – REVISED DECEMBER 2016 www.ti.com Product Folder Links: INA240-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. 8 Specifications 8.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage 6 V Analog inputs, VIN+, VIN– (2) Differential (VIN+) – (VIN–) –80 80 V Common-mode –6 90 REF1, REF2, NC inputs GND – 0.3 VS + 0.3 V Output GND – 0.3 VS + 0.3 V Temperature Operating, TA –55 150 °C Junction, TJ 150 Storage, Tstg –65 150 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 8.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±1000 8.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input voltage –4 80 V VS Operating supply voltage 2.7 5.5 V TA Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 8.4 Thermal Information THERMAL METRIC(1) INA240-Q1 UNIT PW (TSSOP) D (SOIC) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 149.1 113.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.2 57.3 °C/W RθJB Junction-to-board thermal resistance 78.4 53.5 °C/W ψJT Junction-to-top characterization parameter 1.5 11.1 °C/W ψJB Junction-to-board characterization parameter 76.4 53 °C/W |
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