PMGD400UN datasheet(5/12 Pages) PHILIPS

Part #	PMGD400UN

Description	Dual N-channel mTrenchMOS??ultra low level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PMGD400UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 3 March 2004

5 of 12

9397 750 12759

6.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID =1 µA; VGS =0V

Tj =25 °C

30

--V

Tj = −55 °C

27

--V

VGS(th)

gate-source threshold voltage

ID = 0.25 mA; VDS =VGS; Figure 9

Tj =25 °C

0.45

0.7

1

V

Tj = 150 °C

0.25

-

V

Tj = −55 °C

-

1.2

V

IDSS

drain-source leakage current

VDS =30V; VGS =0V

Tj =25 °C

--1

µA

Tj = 150 °C

-

100

µA

IGSS

gate-source leakage current

VGS = ±8 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID = 0.2 A; Figure 7 and 8

Tj =25 °C

-

400

480

m

Ω

Tj = 150 °C

-

660

816

m

Ω

VGS = 2.5 V; ID = 0.1 A; Figure 7 and 8

-

480

580

m

Ω

VGS = 1.8 V; ID = 0.075 A; Figure 7 and 8

-

580

830

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 1 A; VDD =15V; VGS = 4.5 V;

Figure 13

-

0.89

-

nC

Qgs

gate-source charge

-

0.1

-

nC

Qgd

gate-drain (Miller) charge

-

0.2

-

nC

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz;

Figure 11

-43

-

pF

Coss

output capacitance

-

7.7

-

pF

Crss

reverse transfer capacitance

-

4.8

-

pF

td(on)

turn-on delay time

VDD =15V; RL =15 Ω;

VGS = 4.5 V; RG =6 Ω

-4

-ns

tr

rise time

-

7.5

-

ns

td(off)

turn-off delay time

-

18

-

ns

tf

fall time

-

4.5

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 0.3 A; VGS =0V; Figure 12

-

0.76

1.2

V

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