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2SC3419 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3419 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3419 DESCRIPTION · Low Collector Saturation Voltage · High power dissipation · Complementary to 2SA1356 · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A PC Collector Power Dissipation @ Tc=25℃ 5.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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