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RP108J101F-T1-FE Datasheet(PDF) 10 Page - RICOH electronics devices division

Part # RP108J101F-T1-FE
Description  Output Current Min. 3A
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Manufacturer  RICOH [RICOH electronics devices division]
Direct Link  http://www.ricoh.com
Logo RICOH - RICOH electronics devices division

RP108J101F-T1-FE Datasheet(HTML) 10 Page - RICOH electronics devices division

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RP108J
NO.EA-203-150817
10
REVERSE CURRENT PROTECTION CIRCUIT
The RP108J includes a Reverse Current Protection Circuit, which stops the reverse current from VOUT pin to
VDD pin or to GND pin when VOUT becomes higher than VIN.
Usually, the LDO using Pch output transistor contains a parasitic diode between VDD pin and VOUT pin.
Therefore, if VOUT is higher than VIN, the parasitic diode becomes forward direction. As a result, the current flows
from VOUT pin to VDD pin.
The RP108J switches the mode to the reverse current protection mode before VIN becomes lower than VOUT
by connecting the parasitic diode of Pch output transistor to the backward direction, and connecting the gate to
VOUT pin. As a result, the Pch output transistor is turned off and the all the current pathways from VOUT pin to GND
pin are shut down to maintain the reverse current lower than 10
µA.
Switching to either the normal mode or to the reverse current protection mode is determined by the magnitude
of VIN voltage and VOUT voltage. For the stable operation, offset and hysteresis are set as the threshold. Offset is
set to 30mV (Typ.25
°C) and hysteresis is set to 5mV (Typ.25°C).
Therefore, the minimum dropout voltage under the small load current condition is restricted by the value of
35mV (Typ.25
°C).
Fig.1 and Fig.2 show the diagrams of each mode, and Fig.3 shows the load characteristics of each mode.
When giving the VOUT pin a constant-voltage and decreasing the VIN voltage, the dropout voltage will become
lower than 30mV (Typ.25
°C). As a result, the reverse current protection starts to function to stop the load current.
By increasing the dropout voltage higher than 35mV (Typ.25
°C), the protection mode will be released to let the
load current to flow. If the dropout voltage to be used is lower than 30mV (Typ.25
°C), the detection and the
release may be repeated.
VDD
GND
VOUT
CE
Vref
IOUT
Reverse
Detector
VDD
GND
VOUT
CE
Vref
IREV
Reverse
Detector
Fig.1 Normal Mode
Fig.2 Reverse Current Protection Mode
Fig. 3 Reverse Current Protection Mode Detection/ Release &
VREV_DET
VREV_REL
VOUT
VIN
0
Reverse Current Protection Mode
Normal Mode
Normal Mode
IOUT
IREV
Reverse Current/ Output Current Characteristics
35mV
30mV


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