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TPC8110 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8110 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8110 2002-05-24 4 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID −2 −3 −4 −5 Common source VDS = −10 V Pulse test 0 −20 −30 −40 −10 0 −1 100 Ta = −55°C 25 −4 −8 −10 −12 Common source Ta = 25°C Pulse test 0 −0.2 −0.4 −0.6 −0.8 0 −2 ID = −8.0 A −2.0 −6 −4.0 −2 −3 −4 −5 Common source Ta = 25°C Pulse test −2.5 VGS = −2.25 V 0 −20 −30 −40 −10 0 −1 −6 −8 −2.75 −3.0 −4 −3.5 −3.25 −10 −5 −3.75 3 10 100 1000 5 30 50 300 500 −0.1 −1 −10 −50 Common source Ta = 25°C Pulse test VGS = −4 V −10 −30 −3 −5 −0.3 −0.5 0.3 1 10 100 0.5 3 5 30 50 −0.1 −1 −10 −50 Common source VDS = −10 V Pulse test Ta = −55°C 100 25 −30 −3 −5 −0.3 −0.5 0 −0.2 0 −0.4 −0.6 −0.8 −1 −2 −4 −6 −8 −10 Common source Ta = 25°C Pulse test −2.5 −4 −10 −8 VGS = −2.25 V −3.75 −2.75 −3.5 −3.25 −3.0 −6 −5 |
Similar Part No. - TPC8110 |
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Similar Description - TPC8110 |
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