BD243B_14 datasheet(5/6 Pages) ONSEMI

Part #	BD243B

Description	Complementary Silicon Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BD243B, BD243C (NPN), BD244B, BD244C (PNP)

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5

103

Figure 12. Collector Cut-Off Region

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

102

101

100

10-1

10- 2

10- 3

-0.3 -0.2 -0.1

0

+0.1 +0.2 +0.3

+0.4 +0.5 +0.6

VCE = 30 V

TJ = 150°C

100

°C

REVERSE

FORWARD

IC = ICES

10M

Figure 13. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

20

40

60

80

100

120

140

160

1.0M

100k

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

IC = 2 x ICES

25

°C

+0.7

10k

1.0k

0.1k

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