RA07M1317M-01 datasheet(2/9 Pages) MITSUBISHI

Part #	RA07M1317M-01

Description	135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 9 page

MITSUBISHI RF POWER MODULE

RA 07M1317 M

RA07M1317M

MITSUBISHI ELECTRIC

25 April 2003

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG<3.5V

9.2

V

VGG

Gate Voltage

VDD<7.2V, Pin=0mW

4

V

Input Power

30

mW

Pout

Output Power

f=135-175MHz,

ZG=ZL=50Ω

10

W

Tcase(OP)

Operation Case Temperature Range

-30 to +90

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

135

175

MHz

Pout

Output Power

VDD=7.2V,VGG=3.5V, Pin=20mW

6.5

W

η

T

Total Efficiency

45

%

2fo

2

nd Harmonic

-25

dBc

ρ

in

Input VSWR

4:1

—

IGG

Gate Current

Pout=6W (VGG control),

VDD=7.2V,

Pin=20mW

1

mA

—

Stability

VDD=4.0-9.2V, Pin=10-30mW, Pout<8W (VGG control),

Load VSWR=4:1

No parasitic oscillation

—

Load VSWR Tolerance

VDD=9.2V, Pin=20mW, Pout=7W (VGG control),

Load VSWR=20:1

No degradation or

destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

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