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BUK200-50X Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BUK200-50X
Description  PowerMOS transistor TOPFET high side switch
Download  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK200-50X Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D% = 100⋅PD/PD(25 ˚C) = f(Tmb)
Fig.6. Limiting continuous on-state load current.
I
L = f(Tmb); conditions: VIG = 5 V, VBG = 13 V
Fig.7. Typical on-state characteristics, T
j = 25 ˚C.
I
L = f(VBL); parameter VBG; tp = 250 µs
Fig.8. Typical on-state resistance, T
j = 25 ˚C.
R
ON = f(VBG); conditions: IL = 5 A; tp = 300 µs
Fig.9. Typical on-state resistance, t
p = 300 µs.
R
ON = f(Tj); parameter VBG; condition IL = 1 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
VBL
0
1
2
VBL / V
IL / A
BUK200-50X
20
15
10
5
0
0.5
1.5
VBG / V =
13
5
6
7
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
RON / mO
BUK200-50X
150
100
50
0
0
20
40
60
80
100
120
140
Tmb / C
IL / A
BUK200-50X
15
10
5
0
-60
-20
20
60
100
140
180
Tj / C
RON / mOhm
BUK200-50X
200
150
100
50
0
VBG =
5 V
13 V
typ.
April 1995
6
Rev 1.000


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