BUK110-50GS datasheet(3/11 Pages) PHILIPS

Part #	BUK110-50GS

Description	PowerMOS transistor TOPFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK110-50GS

TOPFET

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

R

th j-mb

Junction to mounting base

-

0.8

1.0

K/W

R

th j-a

Junction to ambient

minimum footprint FR4 PCB

-

50

-

K/W

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(CL)DSS

Drain-source clamping voltage

V

IS = 0 V; ID = 10 mA

50

-

V

(CL)DSS

Drain-source clamping voltage

V

IS = 0 V; IDM = 4 A; tp ≤ 300 µs;

-

70

V

δ ≤ 0.01

I

DSS

Zero input voltage drain current V

DS = 12 V; VIS = 0 V

-

0.5

10

µA

I

DSS

Zero input voltage drain current V

DS = 50 V; VIS = 0 V

-

1

20

µA

I

DSS

Zero input voltage drain current V

DS = 40 V; VIS = 0 V; Tj = 125 ˚C

-

10

100

µA

R

DS(ON)

Drain-source on-state

I

DM = 25 A;

V

IS = 10 V

-

22

28

m

Ω

resistance

t

p ≤ 300 µs; δ ≤ 0.01

V

IS = 5 V

-

30

35

m

Ω

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Short circuit load protection

1

T

mb = 25 ˚C; L ≤ 10 µH

E

DS(TO)

Overload threshold energy

V

DD = 13 V; VIS = 10 V

-

1.1

-

J

t

d sc

Response time

V

DD = 13 V; VIS = 10 V

-

0.8

-

ms

Over temperature protection

T

j(TO)

Threshold junction temperature V

IS = 10 V; from ID ≥ 2 A

2

150

-

˚C

INPUT CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified.

The supply for the logic and overload protection is taken from the input.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

IS(TO)

Input threshold voltage

V

DS = 5 V; ID = 1 mA

1.0

1.5

2.0

V

I

IS

Input supply current

V

IS = 10 V; normal operation

-

0.4

1.0

mA

V

ISR

Protection reset voltage

3

2.0

2.6

3.5

V

ISR

Protection reset voltage

T

j = 150 ˚C

1.0

-

I

ISL

Input supply current

V

IS = 10 V; protection latched

2

6

20

mA

V

(BR)IS

Input clamp voltage

I

I = 10 mA

11

13

-

V

R

IG

Input series resistance

to gate of power MOSFET

-

1.5

-

k

Ω

1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for

P

DSM, which is always the case when VDS is less than VDSP maximum.

Refer to OVERLOAD PROTECTION LIMITING VALUES.

2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I

D

ensures this condition.

3 The input voltage below which the overload protection circuits will be reset.

June 1996

3

Rev 1.000

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