ISL70003SEH

11

FN8604.5

May 12, 2016

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POWER BLOCKS

170

420

700

mΩ

120

310

600

mΩ

90

240

455

mΩ

60

210

425

mΩ

LXx Output Leakage

EN = LXx = GND, Single LXx Output

1

3

µA

1

3

µA

Dead Time

Within a Single Power Block or between Power

Blocks (Note 14)

4

ns

POWER-GOOD SIGNAL

Rising Threshold

107

111

115

%

Rising Hysteresis

2

3.5

5

%

Falling Threshold

85

89

93

%

Falling Hysteresis

2

3.5

5

%

Power-good Drive

7.2

mA

Power-good Leakage

1

µA

PROTECTION FEATURES

Undervoltage Protection

Undervoltage Trip Threshold

71

75

79

%

Undervoltage Recovery Threshold

86

90

94

%

Overcurrent Protection

Overcurrent Accuracy

0.43

0.6

0.77

A/LX

BUFFER AMPLIFIER

Gain Bandwidth Product

(Note 14)

200

kHz

Source Current Capability

20

mA

Sink Current Capability

250

400

µA

Offset Voltage

-4

0

4

mV

IMON CURRENT MONITOR

IMON Sense Time

145

215

300

ns

IMON Output Current Gain

100

µA/A

IMON Gain Accuracy

-14

14

µA

NOTES:

12. Typical values shown are not guaranteed.

13. The 0A to 6A output current range may be reduced by Minimum LXx On Time and Minimum LXx Off Time specifications.

14. Limits established by characterization or analysis and are not production tested.

15. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C and +125°C, unless otherwise specified.

range, -55°C to +125°C; over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or over a total ionizing dose of

50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

TEST CONDITIONS

MIN

MAX