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ISL71841SEHVX Datasheet(PDF) 6 Page - Intersil Corporation |
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ISL71841SEHVX Datasheet(HTML) 6 Page - Intersil Corporation |
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6 / 29 page  ISL71841SEH 6 FN8735.4 June 3, 2016 Submit Document Feedback IS(OFF) POWER OFF Switch Off Leakage with Device Powered Off VIN = +25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -10 - 80 nA Post radiation -100 - 100 nA VIN = -25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -80 - 10 nA Post radiation -100 - 100 nA IS(ON) OVERVOLT Switch On Leakage Current Into the Source (overvoltage) VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -80 - 80 nA Post radiation -500 - 500 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -500 - 500 nA IS(OFF) OVERVOLT Switch Off Leakage Current Into the Source (overvoltage) VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -80 - 80 nA Post radiation -750 - 750 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -750 - 750 nA ID(OFF) Switch Off Leakage VOUT = V+ - 5V, all inputs = V- + 5V V± = ±16.5V, TA = +25°C, -55°C -10 - 10 nA TA = +125°C 0 - 120 nA Post radiation -80 - 80 nA VOUT = V- + 5V, all inputs = V+ - 5V V± = ±16.5V, TA = +25°C, -55°C -10 - 10 nA TA = +125°C -120 - 0 nA Post radiation -80 - 80 nA ID(OFF) OVERVOLT Switch Off Leakage Current Into the Drain (overvoltage) VOUT = 0V, VIN = +35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA VOUT = 0V, VIN = -35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA Electrical Specifications (±15V) V+ = 15V, V- = -15V, V AH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) SYMBOL PARAMETER TEST CONDITIONS MIN (Note 7)TYP MAX (Note 7)UNIT |
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