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SPN125T06ST251TGB Datasheet(PDF) 4 Page - SYNC POWER Crop.

Part # SPN125T06ST251TGB
Description  N-Channel Enhancement Mode MOSFET
Download  12 Pages
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Manufacturer  SYNC-POWER [SYNC POWER Crop.]
Direct Link  http://www.syncpower.com
Logo SYNC-POWER - SYNC POWER Crop.

SPN125T06ST251TGB Datasheet(HTML) 4 Page - SYNC POWER Crop.

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2017/1/11
Ver 3
Page 4
SPN125T06
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250uA
60
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
2.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
TJ = 25 °C
1
uA
VDS=60V, VGS=0V
TJ = 100 °C
100
Drain-Source On-Resistance
RDS(on)
VGS= 10V,ID=20A
3.6
4.3
mΩ
VGS= 4.5V,ID=20A
4.5
5.6
Forward Transconductance
gfs
VDS=5V,ID=20A
75
S
Diode Forward Voltage
VSD
IS=20A ,VGS =0V
1.2
V
Dynamic
Total Gate Charge (10V)
Qg
VDS=30V, VGS=10V
ID = 20A
54
nC
Total Gate Charge (4.5V)
Qg
27
Gate-Source Charge
Qgs
14
Gate-Drain Charge
Qgd
6
Input Capacitance
Ciss
VDS=30V, VGS=0V
f=1MHz
3800
pF
Output Capacitance
Coss
520
Reverse Transfer Capacitance
Crss
50
Turn-On Time
td(on)
VDD=30V, ID=20A
VGEN=10V, RG=10Ω
16
nS
tr
36
Turn-Off Time
td(off)
55
tf
35


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