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LM4881N Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM4881N Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 11 page Absolute Maximum Ratings (Note 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD + 0.3V Power Dissipation (Note 4) Internally limited ESD Susceptibility (Note 5) 3500V ESD Susceptibility (Note 6) 250V Junction Temperature 150˚C Soldering Information (Note 1) Small Outline Package Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C Thermal Resistance θ JC (MSOP) 56˚C/W θ JA (MSOP) 210˚C/W θ JC (SOP) 35˚C/W θ JA (SOP) 170˚C/W θ JC (DIP) 37˚C/W θ JA (DIP) 107˚C/W Operating Ratings Temperature Range T MIN ≤ TA ≤ TMAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.7V ≤ V DD ≤ 5.5V Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli- ability” for other methods of soldering surface mount devices. Electrical Characteristics (Notes 2, 3) The following specifications apply for V DD = 5V unless otherwise specified. Limits apply for TA = 25C. Symbol Parameter Conditions LM4881 Units (Limits) Typ (Note 7) Limit (Note 8) V DD Power Supply Voltage 2.7 V (min) 5.5 V (max) I DD Quiescent Current V IN = 0V, IO = 0A 3.6 6.0 mA (max) I SD Shutdown Current V PIN1 =VDD 0.7 5 µA (max) V OS Offset Voltage V IN = 0V 5 50 mV (max) P O Output Power THD = 0.1% (max);f=1 kHz; R L =8Ω 200 125 mW (min) R L =16Ω 150 mW R L =32Ω 85 mW THD+N=10%;f=1 kHz; R L =8Ω 300 mW R L =16Ω 200 mW R L =32Ω 110 mW THD+N Total Harmonic Distortion + Noise R L =16Ω,P O = 120 mWrms; 0.025 % R L =32Ω,PO = 75 mWrms; f=1kHz 0.02 % PSRR C B = 1.0 µF, VRIPPLE = 200 mVrms, f = 120Hz 50 dB www.national.com 2 |
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