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IRL2703S Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL2703S
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 1 page
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HEXFET® Power MOSFET
IRL2703S
PD - 9.1360
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
VDSS = 30V
RDS(on) = 0.04Ω
ID = 24A
S
D
G
11/18/96
PRELIMINARY
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
3.3
RθJA
Junction-to-Ambient (PCB Mount,steady-state)**
––––
––––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
…
24
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
…
17
A
IDM
Pulsed Drain Current

96
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/°C
VGS
Gate-to-Source Voltage
±16
V
EAS
Single Pulse Avalanche Energy
‚…
77
mJ
IAR
Avalanche Current

14
A
EAR
Repetitive Avalanche Energy

4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
3.5
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Description
2
D Pak




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