 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
JANSH2N7262 Datasheet(PDF) 3 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
JANSH2N7262 Datasheet(HTML) 3 Page - International Rectifier |
|
|
3 / 12 page  IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices www.irf.com 3 Radiation Performance of Rad Hard HEXFETs Table 1. Low Dose Rate IRHF7230 IRHF8230 Parameter 100K Rads (Si) 1000K Rads (Si) Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=0.8 x Max Rating, VGS =0V RDS(on)1 Static Drain-to-Source — 1.225 — 1.68 Ω VGS = 12V, ID = 3.5A On-State Resistance One VSD Diode Forward Voltage — 1.4 — 1.4 V TC = 25°C, IS =5.5A,VGS = 0V International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hard- ness assurance program at International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 6 and a V DS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post- irra- diation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, col- umn 1, IRHF7230. Post-irradiation limits of the devices irradiated to 1 x 106 Rads (Si) are presented in Table 1, column 2, IRHF8230. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec (See Table 2). International Rectifier radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects char- acterization is shown in Table 3. Radiation Characteristics Table 2. High Dose Rate 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter Min Typ Max Min Typ Max Units Test Conditions VDSS Drain-to-Source Voltage — — 160 — — 160 V Applied drain-to-source voltage during gamma-dot IPP — 20 — — 20 — A Peak radiation induced photo-current di/dt — — 160 — — 8.0 A/µsec Rate of rise of photo-current L1 1.0 — — 20 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects LET (Si) Fluence Range VDSBias VGS Bias Ion (MeV/mg/cm2) (ions/cm2) (µm) (V) (V) Cu 28 3x 105 ~43 180 -5 |
Similar Part No. - JANSH2N7262 |
|
Similar Description - JANSH2N7262 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
