DTA044TM datasheet(2/9 Pages) ROHM

Part #	DTA044TM

Description	PNP -60mA -50V Digital Transistor

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Manufacturer	ROHM [Rohm]

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DTA044T series

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

-50

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC*1

-60

mA

Power dissipation

DTA044TM

PD*2

150

mW

DTA044TEB

150

DTA044TUB

200

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = -50μA

-50

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = -1mA

-50

-

V

Emitter-base breakdown voltage

BVEBO

IE = -50μA

-5

-

V

Collector cut-off current

ICBO

VCB = -50V

-

-500

nA

Emitter cut-off current

IEBO

VEB = -4V

-

-500

nA

Collector-emitter saturation voltage

VCE(sat)

IC = -5mA, IB = -0.5mA

-

-70

-150

mV

DC current gain

hFE

VCE = -10V, IC = -5mA

100

-

600

-

Input resistance

R1

-

32.9

47

61.1

kΩ

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

-

250

-

MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

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2/6

20160408 - Rev.003

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