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MIG100J7CSB1W Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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MIG100J7CSB1W Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page MIG100J7CSB1W 2001-11-13 4 Maximum Ratings (Tj ==== 25°C) Stage Characteristic Condition Symbol Rating Unit Supply voltage P-N Power terminal VCC 450 V Collector-emitter voltage ¾ VCES 600 V Collector current Tc = 25°C, DC IC 100 A Forward current Tc = 25°C, DC IF 100 A Collector power dissipation Tc = 25°C, DC PC 590 W Inverter Junction temperature ¾ Tj 150 °C Supply voltage P-N Power terminal VCC 450 V Collector-emitter voltage ¾ VCES 600 V Collector current Tc = 25°C, DC IC 50 A Reverse voltage ¾ VR 600 V Forward current Tc = 25°C, DC IF 50 A Collector power dissipation Tc = 25°C, DC PC 340 W Brake Junction temperature ¾ Tj 150 °C Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Control Fault output current FO sink current IFO 14 mA Operating temperature ¾ Tc -20~ + 100 °C Storage temperature Range ¾ Tstg -40~ + 125 °C Isolation voltage AC 1 min VISO 2500 V Screw torque (Terminal) M4 ¾ 2 Module Screw torque (Mounting) M5 ¾ 3 N・m Electrical Characteristics 1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj = 25°C ¾ ¾ 1 Collector cut-off current ICEX VCE = 600 V Tj = 125°C ¾ ¾ 10 mA Tj = 25°C 1.6 1.9 2.3 Collector-emitter saturation voltage VCE (sat) VD = 15 V IC = 100 A VIN = 15 V ® 0 V Tj = 125°C ¾ 2.1 ¾ V Forward voltage VF IF = 100 A, Tj = 25°C ¾ 2.1 2.5 V ton ¾ 1.3 2.2 tc (on) ¾ 0.3 ¾ trr ¾ 0.2 ¾ toff ¾ 1.1 2.1 Switching time tc (off) VCC = 300 V, IC = 100 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load (Note 1) ¾ 0.2 ¾ ms Note 1: Switching time test circuit & timing chart |
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