MJD31CRLG datasheet(2/10 Pages) ONSEMI

Part #	MJD31CRLG

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD31 (NPN), MJD32 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, MJD32

MJD31C, MJD32C

VCEO(sus)

40

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, MJD32

(VCE = 60 Vdc, IB = 0)

MJD31C, MJD32C

ICEO

−

50

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

20

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

25

10

−

50

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

−

1.2

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT

3

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

20

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

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