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Si8275ABD-IM Datasheet(PDF) 11 Page - Silicon Laboratories |
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Si8275ABD-IM Datasheet(HTML) 11 Page - Silicon Laboratories |
11 / 43 page The maximum power dissipation allowable for the Si827x is a function of the package thermal resistance, ambient temperature, and maximum allowable junction temperature, as shown in Equation 2: PDmax ≤ T jmax − TA θ ja where: PDmax = Maximum Si827x power dissipation (W) Tjmax = Si827x maximum junction temperature (150 °C) TA = Ambient temperature (20 °C) θja = Si827x junction-to-air thermal resistance (105 °C/W) Equation 2 Substituting values for PDmax Tjmax, TA, and θja into Equation 2 results in a maximum allowable total power dissipation of 1.19 W. Maxi- mum allowable load is found by substituting this limit and the appropriate data sheet values from Table 4.1 Electrical Characteristics on page 16 into Equation 1 and simplifying. The result is Equation 3, both of which assume VDDI = 5 V and VDDA = VDDB = 12 V. CL (MAX ) = 1.24 × 10−2 f − 1.21 × 10−9 Equation 3 Figure 2.17. Max Load vs. Switching Frequency 2.5 Layout Considerations It is most important to minimize ringing in the drive path and noise on the Si827x VDD lines. Care must be taken to minimize parasitic inductance in these paths by locating the Si827x as close to the device it is driving as possible. In addition, the VDD supply and ground trace paths must be kept short. For this reason, the use of power and ground planes is highly recommended. A split ground plane sys- tem having separate ground and VDD planes for power devices and small signal components provides the best overall noise perform- ance. Si827x Data Sheet System Overview silabs.com | Smart. Connected. Energy-friendly. Preliminary Rev. 0.5 | 10 |
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