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BT136B-600E Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT136B-600E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Triacs BT136B series E sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W R th j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 2.5 10 mA T2+ G- - 4.0 10 mA T2- G- - 5.0 10 mA T2- G+ - 11 25 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 3.0 15 mA T2+ G- - 10 20 mA T2- G- - 2.5 15 mA T2- G+ - 4.0 20 mA I H Holding current V D = 12 V; IGT = 0.1 A - 2.2 15 mA V T On-state voltage I T = 5 A - 1.4 1.70 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D Off-state leakage current V D = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/ µs off-state voltage exponential waveform; gate open circuit t gt Gate controlled turn-on I TM = 6 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs March 1997 2 Rev 1.000 |
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