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FW306 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FW306 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page Specifications and information herin are subject to change without notice. 990401TM2fXHD Absolute Maximum Ratings / Ta=25 °C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature V V A A W W °C °C Electrical Characteristics / Ta=25 °C (N-channel) (P-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VDSS VGSS ID IDP PD PT Tch Tstg TENTATIVE PW ≤10µS, dutycycle≤1% Mounted on ceramic board (1000mm2 ! 0.8mm) 1unit Mounted on ceramic board (1000mm2 ! 0.8mm) unit P-channel N-channel Features • High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs. • Low ON-state resistance. 30 ±25 --3 --32 1.7 2.0 150 --55 to ±150 30 ±25 5 32 min typ max unit 30 1.0 5 V µA µA V S m Ω m Ω pF pF pF ns ns ns ns V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA , VGS=0 VDS=30V , VGS=0 VGS= ±20V , VDS=0 VDS=10V , ID=1mA VDS=10V , ID=5A ID=5A , VGS=10V ID=2A , VGS=4V VDS=10V , f=1MHz VDS=10V , f=1MHz VDS=10V , f=1MHz See Specified Test Circuit IS=5A , VGS = 0 N- Channel Silicon MOS FET High Speed Switching 8 50 84 460 340 85 13 300 30 50 1.0 100 ±10 2.5 65 120 1.2 FW306 SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage min typ max unit --30 --1.0 3 V µA µA V S m Ω m Ω pF pF pF ns ns ns ns V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=--1mA , VGS=0 VDS=--30V , VGS=0 VGS= ±20V , VDS=0 VDS=--10V , ID=--1mA VDS=--10V , ID=--3A ID=--3A , VGS=--10V ID=--2A , VGS=--4V VDS=--10V , f=1MHz VDS=--10V , f=1MHz VDS=--10V , f=1MHz See Specified Test Circuit IS=--3A , VGS = 0 5 110 200 460 350 80 13 150 30 50 --1.0 --100 ±10 --2.5 160 320 --1.2 |
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