© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 15

Publication Order Number:

BC856ALT1/D

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BC856ALT1G Series

General Purpose

Transistors

PNP Silicon

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

−65

−45

−30

V

Collector-Base Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

−80

−50

−30

V

Emitter−Base Voltage

−5.0

V

Collector Current − Continuous

−100

mAdc

Collector Current − Peak

−200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

xx M

G

G

xx

= Device Code

xx = (Refer to page 6)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

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