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NSVBSS63LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NSVBSS63LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 8 1 Publication Order Number: BSS63LT1/D BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −100 Vdc Collector − Emitter Voltage RBE = 10 kW VCER −110 Vdc Collector Current − Continuous IC −100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. COLLECTOR 3 1 BASE 2 EMITTER SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 1 3 2 Device Package Shipping† ORDERING INFORMATION BSS63LT1G SOT−23 (Pb−free) 3000 / Tape & Reel BM = Device Code M = Date Code* G = Pb−Free Package *Date Code orientation and/or overbar may vary depending upon manufacturing location. (Note: Microdot may be in either location) BM M G G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NSVBSS63LT1G SOT−23 (Pb−free) 3000 / Tape & Reel www.onsemi.com |
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