SMMBT4403LT1G datasheet(3/7 Pages) ONSEMI

Part #	SMMBT4403LT1G

Description	Switching Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT4403L, SMMBT4403L

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3

Figure 3. Charge Data

IC, COLLECTOR CURRENT (mA)

2.0

3.0

5.0

7.0

10

1.0

10

20

50

70

100

200

0.1

300

500

0.7

0.5

VCC = 30 V

IC/IB = 10

Figure 4. Turn−On Time

IC, COLLECTOR CURRENT (mA)

20

30

50

5.0

10

7.0

Figure 5. Rise Time

IC, COLLECTOR CURRENT (mA)

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

QT

QA

25

°C

100

°C

TRANSIENT CHARACTERISTICS

0.3

0.2

30

70

100

10

20

50

70

100

200

300

500

30

IC/IB = 10

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

td @ VBE(off) = 0

20

30

50

5.0

10

7.0

70

100

10

20

50

70

100

200

300

500

30

VCC = 30 V

IC/IB = 10

10

20

50

70

100

200

300

500

30

100

20

70

50

200

30

IC/IB = 10

IC/IB = 20

IB1 = IB2

ts′ = ts - 1/8 tf

6

8

10

0

4

2

0.1

2.0 5.0

10

20

50

1.0

0.5

0.2

0.01 0.02

0.05

100

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE

VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 430 W

IC = 500 mA, RS = 560 W

IC = 50 mA, RS = 2.7 kW

IC = 100 mA, RS = 1.6 kW

RS = OPTIMUM SOURCE RESISTANCE

50

100

200

500

1k

2k

5k

10k

20k

50k

6

8

10

0

4

2

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1 kHz

IC = 50 mA

100

mA

500

mA

1.0 mA

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