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MMBT2222L Datasheet(PDF) 1 Page - ON Semiconductor |
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MMBT2222L Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 11 1 Publication Order Number: MMBT2222LT1/D MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VCEO 30 40 Vdc Collector − Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VCBO 60 75 Vdc Emitter − Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VEBO 5.0 6.0 Vdc Collector Current − Continuous IC 600 mAdc Collector Current − Peak (Note 3) ICM 1100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM xxx = 1P or M1B M = Date Code* G = Pb−Free Package COLLECTOR 3 1 BASE 2 EMITTER (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION 1 2 1 3 xxx M G G www.onsemi.com |
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