NSVMMBT5401LT3G datasheet(4/6 Pages) ONSEMI

Part #	NSVMMBT5401LT3G

Description	High Voltage Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT5401L, SMMBT5401L, NSVMMBT5401L

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4

Figure 4. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 5. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0

0.03

0.05

0.08

0.10

0.15

0.18

0.20

0.1

0.01

0.001

0.0001

0.2

0.3

0.4

0.5

0.7

0.8

0.9

1.0

Figure 6. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

0.13

IC/IB = 10

150

°C

−55

°C

25

°C

0.6

IC/IB = 10

150

°C

−55

°C

25

°C

0.4

0.9

VCE = 10 V

150

°C

−55

°C

25

°C

Figure 7. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

2.5

100

TJ = 25°C

Cibo

Figure 8. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

10.2 V

Vin

10

ms

INPUT PULSE

VBB

+8.8 V

100

RB

5.1 k

0.25

mF

Vin

100

1N914

Vout

RC

VCC

-30 V

3.0 k

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

0.3

3.0

30

2.0

1.5

1.0

0.5

0

-0.5

-1.0

-1.5

-2.0

-2.5

TJ = - 55°C to 135°C

qVC for VCE(sat)

qVB for VBE(sat)

Cobo

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

0.2

0.5

1.0

2.0

5.0

10

20

0.3

3.0

0.7

7.0

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