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NSVMMBT5087LT1G Datasheet(PDF) 6 Page - ON Semiconductor

Part # NSVMMBT5087LT1G
Description  Low Noise Transistor
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSVMMBT5087LT1G Datasheet(HTML) 6 Page - ON Semiconductor

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MMBT5087L
www.onsemi.com
6
Figure 14. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k 10k
20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569/D)
ZqJA(t) = r(t) • RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 16
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
Figure 15. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
14 by the steady state value RqJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
10-2
10-1
100
101
102
103
-2
0
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V


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