MMBT489LT1G_16 datasheet(2/4 Pages) ONSEMI

Part #	MMBT489LT1G

Description	High Current Surface Mount NPN Silicon Switching Transistor

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MMBT489LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

30

−

Vdc

Collector− Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

50

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

−

0.1

mAdc

Collector−Emitter Cutoff Current

(VCES = 30 Vdc)

ICES

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc)

IEBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mA, VCE = 5.0 V)

(IC = 0.5 A, VCE = 5.0 V)

(IC = 1.0 A, VCE = 5.0 V)

hFE

300

200

−

900

−

Collector − Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 100 mA)

(IC = 0.5 A, IB = 50 mA)

(IC = 0.1 A, IB = 1.0 mA)

VCE(sat)

−

0.200

0.125

0.075

V

Base − Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 0.1 A)

VBE(sat)

−

1.1

V

Base − Emitter Turn−on Voltage (Note 3)

(IC = 1.0 mA, VCE = 2.0 V)

VBE(on)

−

1.1

V

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz

fT

100

−

MHz

Output Capacitance

(f = 1.0 MHz)

Cobo

−

15

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulsed Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%

Figure 1. VCE versus Ib

0.001

0.2

0.01

0.1

1.0

0

0.1

Ib (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Figure 2. VCE versus Ic

0.001

2

0.01

0.1

1.0

0

0.1

Ic (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

IC = 2 A

IC = 1 A

IC = 500 mA

IC = 100 mA

Ic/Ib = 100

Ic/Ib = 10

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