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IRHM3130 Datasheet(PDF) 2 Page - International Rectifier |
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IRHM3130 Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page 2 www.irf.com IRHM7130 IRHM7130 IRHM7130 IRHM7130 IRHM7130 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions IS Continuous Source Current (Body Diode) 14 ISM Pulse Source Current (Body Diode) ➀ 56 VSD Diode Forward Voltage 1.8 V Tj = 25°C, IS = 14A, VGS = 0V ➃ trr Reverse Recovery Time 370 nS Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge 3.5 µC VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions RthJC Junction-to-Case 1.67 RthJA Junction-to-Ambient 48 °C/W RthCS Case-to-Sink 0.21 Typical socket mount Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown 0.12 V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.18 Ω VGS = 12V, ID =9.0A Resistance 0.20 VGS = 12V, ID = 14A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 3.3 S ( )VDS > 15V, IDS = 9.0A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS= 80V ,VGS=0V 250 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 45 VGS =12V, ID =14A Qgs Gate-to-Source Charge 11 nC VDS = 50V Qgd Gate-to-Drain (Miller) Charge 17 td(on) Turn-On Delay Time 30 VDD = 50V, ID =14A tr Rise Time 120 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time 49 tf Fall Time 64 LS + LD Total Inductance 6.8 Ciss Input Capacitance 1100 VGS = 0V, VDS = 25V Coss Output Capacitance 310 pF f = 1.0MHz Crss Reverse Transfer Capacitance 55 nA ➃ nH ns µA Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /25in. from package) with Source wires internally bonded from Source Pin to Drain Pad |
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