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CPV364M4U Datasheet(PDF) 1 Page - International Rectifier |
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CPV364M4U Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 20 IC @ TC = 100°C Continuous Collector Current, each IGBT 10 ICM Pulsed Collector Current 60 A ILM Clamped Inductive Load Current 60 IF @ TC = 100°C Diode Continuous Forward Current 9.3 IFM Diode Maximum Forward Current 60 VGE Gate-to-Emitter Voltage ±20 V VISOL Isolation Voltage, any terminal to case, 1 minute 2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 63 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 25 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m) CPV364M4U PRELIMINARY PD- 5041 Parameter Typ. Max. Units RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 2.0 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction ––– 3.0 °C/W RθCS (MODULE) Case-to-Sink, flat, greased surface 0.10 ––– Wt Weight of module 20 (0.7) ––– g (oz) UltraFast IGBT IGBT SIP MODULE Thermal Resistance Features Description 3 6 71 3 1 9 18 15 10 16 4 9 12 D1 D3 D5 D2 D4 D6 Q1 Q2 Q3 Q4 Q5 Q6 1 Output Current in a Typical 20 kHz Motor Drive Product Summary • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve 12 ARMS per phase (3.5 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Absolute Maximum Ratings 1/21/97 IMS-2 |
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