NOVEMBER 2016

DSC-3624/11

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©2016 Integrated Device Technology, Inc.

Features

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256K x 16 advanced high-speed CMOS Static RAM

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JEDEC Center Power / GND pinout for reduced noise.

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Equal access and cycle times

– Commercial and Industrial: 10/12/15ns

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One Chip Select plus one Output Enable pin

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Bidirectional data inputs and outputs directly

LVTTL-compatible

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Low power consumption via chip deselect

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Upper and Lower Byte Enable Pins

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Single 3.3V power supply

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Available in 44-pin, 400 mil plastic SOJ package and a 44-

pin, 400 mil TSOP Type II package and a 48 ball grid array,

9mmx9mmpackage.

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Green parts available, see ordering information

Description

TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganized

as 256K x 16. It is fabricated using high-performance, high-reliability

CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-

vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as

5ns,withaddressaccesstimesasfastas10ns.Allbidirectionalinputsand

outputsoftheIDT71V416areLVTTL-compatibleandoperationisfroma

single3.3Vsupply.Fullystaticasynchronouscircuitryisused,requiring

no clocks or refresh for operation.

The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a

44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x

9mmpackage.

Functional Block Diagram

Output

Enable

Buffer

Address

Buffers

Chip

Select

Buffer

Write

Enable

Buffer

Byte

Enable

Buffers

OE

A0 - A17

Row / Column

Decoders

CS

WE

BHE

BLE

4,194,304-bit

Memory

Array

Sense

Amps

and

Write

Drivers

16

High

Byte

Output

Buffer

High

Byte

Write

Buffer

Low

Byte

Write

Buffer

Low

Byte

Output

Buffer

8

8

8

8

8

8

8

8

I/O 15

I/O 8

I/O 7

I/O 0

3624 drw 01

3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

IDT71V416S

IDT71V416L