71V016SA20PHG datasheet(3/9 Pages) IDT

Part #	71V016SA20PHG

Description	3.3V CMOS Static RAM

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	IDT [Integrated Device Technology]

Direct Link	http://www.idt.com

Logo

3 / 9 page

3

IDT71V016SA, 3.3V CMOS Static RAM

1 Meg (64K x 16-Bit)

Commercial and Industrial Temperature Ranges

Symbol

Parameter

71V016SA10

71V016SA12

71V016SA15

71V016SA20

Unit

Com'l

Ind'l

Com'l

Ind'l

Com'l

Ind'l

Com'l

Ind'l

ICC

Dynamic Operating Current

CS

≤ VLC, Outputs Open, VDD = Max., f = fMAX(3)

Max.

160

170

150

160

130

120

mA

Typ.(4)

65

--

60

--

55

--

50

--

ISB

Dynamic Standby Power Supply Current

CS

≥ VHC, Outputs Open, VDD = Max., f = fMAX(3)

45

50

40

45

35

30

mA

ISB1

Full Standby Power Supply Current (static)

CS

≥ VHC, Outputs Open, VDD = Max., f = 0(3)

10

mA

3834 tbl 08

Absolute Maximum Ratings(1)

Recommended Operating

Temperature and Supply Voltage

DC Electrical Characteristics

(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)

Capacitance

(TA = +25°C, f = 1.0MHz, SOJ package)

Recommended DC Operating

Conditions

DC Electrical Characteristics(1,2)

(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)

NOTE:

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation

ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational

sections of this specification is not implied. Exposure to absolute maximum rating

conditionsforextendedperiodsmayaffectreliability.

NOTES:

1. For 71V016SA10 only.

2. For all speed grades except 71V016SA10.

3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.

4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.

NOTE:

1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.

NOTES:

1. All values are maximum guaranteed values.

2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).

3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .

4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.

Symbol

Rating

Value

Unit

VDD

Supply Voltage Relative to VSS

–0.5 to +4.6

V

VIN, VOUT Terminal Voltage Relative to VSS

–0.5 to VDD+0.5

V

TBIAS

Temperature Under Bias

–55 to +125

o

C

TSTG

Storage Temperature

–55 to +125

o

C

PT

Power Dissipation

1.25

W

IOUT

DC Output Current

50

mA

3834 tbl 03

Grade

Temperature

VSS

VDD

Commercial

0°C to +70°C

0V

See Below

Industrial

-40°C to +85°C

0V

See Below

3834 tbl 04

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD(1)

Supply Voltage

3.15

3.3

3.6

V

VDD(2)

Supply Voltage

3.0

3.3

3.6

V

Vss

Ground

0

V

VIH

Input High Voltage

2.0

____

VDD+0.3(3)

V

VIL

Input Low Voltage

–0.3(4)

____

0.8

V

3834 tbl 05

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

6

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

3834 tbl 06

Symbol

Parameter

Test Condition

IDT71V016SA

Unit

Min.

Max.

|ILI|

Input Leakage Current

VDD = Max., VIN = VSS to VDD

___

5µA

|ILO|

Output Leakage Current

VDD = Max., CS = VIH, VOUT = VSS to VDD

___

5µA

VOL

Output Low Voltage

IOL = 8mA, VDD = Min.

___

0.4

V

VOH

Output High Voltage

IOH = –4mA, VDD = Min.

2.4

___

V

3834 tbl 07

Similar Part No. - 71V016SA20PHG

Manufacturer	Part #	Datasheet	Description
Integrated Device Techn...	71V016SA	100Kb / 9P	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
Renesas Technology Corp	71V016SA	210Kb / 11P	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Jun.23.20
	71V016SA10BF	210Kb / 11P	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Jun.23.20
	71V016SA10BF8	210Kb / 11P	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Jun.23.20
	71V016SA10BFG	210Kb / 11P	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Jun.23.20

More results

Similar Description - 71V016SA20PHG

Manufacturer	Part #	Datasheet	Description
Integrated Device Techn...	IDT71V416S	645Kb / 9P	3.3V CMOS Static RAM
Integrated Device Techn...	IDT71V424S	72Kb / 9P	3.3V CMOS Static RAM
List of Unclassifed Man...	PDM31564	286Kb / 9P	256 X 16 CMOS 3.3V STATIC RAM
Hitachi Semiconductor	MEJ02C2016_M5M5J167KT	154Kb / 11P	CMOS STATIC RAM
Mitsubishi Electric Sem...	M6MF16S2AVP	1Mb / 21P	CMOS 3.3V-ONLY FLASH MEMORY & CMOS STATIC RAM STACKED-MCP
List of Unclassifed Man...	P3C1024	45Kb / 2P	HIGH SPEED 128K x 8 3.3V STATIC CMOS RAM
Integrated Device Techn...	IDT7MMV4101	86Kb / 8P	128K x 24 Three Megabit 3.3V CMOS Static RAM
Pyramid Semiconductor C...	P3C1256	265Kb / 10P	HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
Samsung semiconductor	KM68V257E	184Kb / 8P	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
Samsung semiconductor	K6R1008V1C-TI15	140Kb / 9P	128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

More results

71V016SA20PHG Datasheet(PDF) 3 Page - Integrated Device Technology

71V016SA20PHG Datasheet(HTML) 3 Page - Integrated Device Technology

Similar Part No. - 71V016SA20PHG

Similar Description - 71V016SA20PHG

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL