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71V416S10YGI8 Datasheet(PDF) 3 Page - Integrated Device Technology |
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71V416S10YGI8 Datasheet(HTML) 3 Page - Integrated Device Technology |
3 / 9 page 6.42 IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges 3 Absolute Maximum Ratings(1) RecommendedOperating Temperature and Supply Voltage Recommended DC Operating Conditions NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. NOTES: 1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle. Truth Table(1) NOTE: 1. H = VIH, L = VIL, X = Don't care. Symbol Rating Value Unit VDD Supply Voltage Relative to VSS -0.5 to +4.6 V VIN, VOUT Terminal Voltage Relative to VSS -0.5 to VDD+0.5 V TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -55 to +125 o C PT Power Dissipation 1 W IOUT DC Output Current 50 mA 3624 tbl 04 Grade Temperature VSS VDD Commercial 0OC to +70OC0V See Below Industrial –40OC to +85OC0V See Below 3624 tbl 05 Symbol Parameter Min. Typ. Max. Unit VDD Supply Voltage 3.0 3.3 3.6 V VSS Ground 0 0 0 V VIH Input High Voltage 2.0 ____ VDD+0.3(1) V VIL Input Low Voltage -0.3(2) ____ 0.8 V 3624 tbl 06 CS OE WE BLE BHE I/O0-I/O7 I/O8-I/O15 Function H X X X X High-Z High-Z Deselected - Standby L L HL HDATAOUT High-Z Low Byte Read L L H H L High-Z DATAOUT High Byte Read LL H L LDATAOUT DATAOUT Word Read LX L L L DATAIN DATAIN Word Write LX L L H DATAIN High-Z Low Byte Write L X L H L High-Z DATAIN High Byte Write L H H X X High-Z High-Z Outputs Disabled L X X H H High-Z High-Z Outputs Disabled 3624 tbl 03 |
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