Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HY29LV800T-70I Datasheet(PDF) 5 Page - Hynix Semiconductor

Part # HY29LV800T-70I
Description  8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
Download  40 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY29LV800T-70I Datasheet(HTML) 5 Page - Hynix Semiconductor

  HY29LV800T-70I Datasheet HTML 1Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 2Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 3Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 4Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 5Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 6Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 7Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 8Page - Hynix Semiconductor HY29LV800T-70I Datasheet HTML 9Page - Hynix Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 40 page
background image
5
Rev. 1.0/Nov. 01
HY29LV800
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (V
IH) causes assertion of the
signal. A ‘#’ symbol following the signal name, e.g.,
RESET#, indicates that the signal is asserted in
the Low state (V
IL).
See DC specifications for V
IH
and V
IL values.
Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexadeci-
mal notation. The designation 0bXXXX indicates a
number expressed in binary notation (X = 0, 1).
MEMORY ARRAY ORGANIZATION
The 8 Mbit Flash memory array is organized into
19 blocks called sectors (S0, S1, . . . , S18). A
sector is the smallest unit that can be erased and
that can be protected to prevent accidental or un-
authorized erasure. See the ‘Bus Operations’ and
‘Command Definitions’ sections of this document
for additional information on these functions.
In the HY29LV800, four of the sectors, which com-
prise the boot block, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining 15
sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29LV800B) or at
the top of the address range (HY29LV800T).
Tables 1 and 2 define the sector addresses and
corresponding address ranges for the top and bot-
tom boot block versions of the HY29LV800.
BUS OPERATIONS
Device bus operations are initiated through the
internal command register, which consists of sets
of latches that store the commands, along with
the address and data information, if any, needed
to execute the specific command. The command
register itself does not occupy any addressable
memory location. The contents of the command
register serve as inputs to an internal state ma-
chine whose outputs control the operation of the
device. Table 3 lists the normal bus operations,
the inputs and control levels they require, and the
resulting outputs. Certain bus operations require
a high voltage on one or more device pins. Those
are described in Table 4.
Read Operation
Data is read from the HY29LV800 by using stan-
dard microprocessor read cycles while placing the
byte or word address on the device’s address in-
puts. The host system must drive the CE# and
OE# pins LOW and drive WE# high for a valid read
operation to take place. The BYTE# pin determines
whether the device outputs array data in words
(DQ[15:0]) or in bytes (DQ[7:0]).
The HY29LV800 is automatically set for reading
array data after device power-up and after a hard-
ware reset to ensure that no spurious alteration of
the memory content occurs during the power tran-
sition. No command is necessary in this mode to
obtain array data, and the device remains enabled
for read accesses until the command register con-
tents are altered.
This device features an Erase Suspend mode.
While in this mode, the host may read the array
data from any sector of memory that is not marked
for erasure. If the host reads from an address
within an erase-suspended (or erasing) sector, or
while the device is performing a byte or word pro-
gram operation, the device outputs status data
instead of array data. After completing an Auto-
matic Program or Automatic Erase algorithm within
a sector, that sector automatically returns to the
read array data mode. After completing a program-
ming operation in the Erase Suspend mode, the
system may once again read array data with the
same exception noted above.
The host must issue a hardware reset or the soft-
ware reset command to return a sector to the read
array data mode if DQ[5] goes high during a pro-
gram or erase cycle, or to return the device to the
read array data mode while it is in the Electronic
ID mode.


Similar Part No. - HY29LV800T-70I

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY29LV160 HYNIX-HY29LV160 Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160BF-12 HYNIX-HY29LV160BF-12 Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160BF-12I HYNIX-HY29LV160BF-12I Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160BF-70 HYNIX-HY29LV160BF-70 Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160BF-70I HYNIX-HY29LV160BF-70I Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
More results

Similar Description - HY29LV800T-70I

ManufacturerPart #DatasheetDescription
logo
Toshiba Semiconductor
TC58FVT800FT-85 TOSHIBA-TC58FVT800FT-85 Datasheet
1Mb / 28P
   8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
logo
Elite Semiconductor Mem...
F49L800UA ESMT-F49L800UA_1 Datasheet
473Kb / 47P
   8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA ESMT-F49L800UA_08 Datasheet
464Kb / 47P
   8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
logo
ATMEL Corporation
AT49F8192AT-70TC ATMEL-AT49F8192AT-70TC Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
logo
Elite Semiconductor Mem...
F49L800UA ESMT-F49L800UA Datasheet
416Kb / 47P
   8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
logo
Hynix Semiconductor
HY29LV160 HYNIX-HY29LV160 Datasheet
517Kb / 48P
   16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
logo
ATMEL Corporation
AT49F008A ATMEL-AT49F008A Datasheet
170Kb / 18P
   8-megabit (1M x 8/512K x 16) Flash Memory
logo
Hynix Semiconductor
HY29LV400 HYNIX-HY29LV400 Datasheet
549Kb / 40P
   4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
logo
ATMEL Corporation
AT49BV008A ATMEL-AT49BV008A Datasheet
246Kb / 16P
   8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory
AT49BV8192A-11TI ATMEL-AT49BV8192A-11TI Datasheet
335Kb / 16P
   8-megabit (1M x 8/512K x 6) Flash memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com