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BCW65ALT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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BCW65ALT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page BCW65ALT1G, BCW65CLT1G www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 32 − − Vdc Collector − Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 60 − − Vdc Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150°C) ICES − − − − 20 20 nAdc mAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − − 20 nAdc ON CHARACTERISTICS DC Current Gain BCW65ALT1 (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 35 75 100 35 − − − − − − 250 − − DC Current Gain BCW65CLT1 (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 80 180 250 100 − − − − − − 630 − − Collector − Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − − 0.7 0.3 − − Vdc Base − Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − − 2.0 Vdc SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB SWITCHING CHARACTERISTICS Turn−On Time (IB1 = IB2 = 15 mAdc) ton − − 100 ns Turn−Off Time (IC = 150 mAdc, RL = 150 W) toff − − 400 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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