© Semiconductor Components Industries, LLC, 2003

October, 2016 − Rev. 7

1

Publication Order Number:

MMBT6521LT1/D

MMBT6521LT1G,

SMMBT6521LT1G

Amplifier Transistor

NPN Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

25

Vdc

Collector − Base Voltage

40

Vdc

Emitter − Base Voltage

4.0

Vdc

Collector Current — Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

SOT− 23 (TO − 236)

CASE 318 − 08

STYLE 6

COLLECTOR

3

1

BASE

2

EMITTER

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

MMBT6521LT1G

1

RO M

G

G

RO

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MARKING DIAGRAM

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SMMBT6521LT1G

www.onsemi.com